Integrated circuit arrangement comprising a pin diode, and...

Details Integrated circuit arrangement comprising a pin diode, and... Integrated circuit arrangement comprising a pin diode, and...

2006-12-28

2009-02-24

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S462000

Reexamination Certificate

active

07495306

ABSTRACT:
An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

REFERENCES:
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patent: WO 02/33755 (2002-04-01), None
patent: WO 2004/025739 (2004-03-01), None
Non-certified English translation of the German Office Action dated May 30, 2005.
German Office Action dated May 30, 2005 [cited in Applicants' Information Disclosure Statement filed on Dec. 28, 2006].

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