Integrated circuit arrangement and method for the...

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

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C257S358000

Reexamination Certificate

active

06913983

ABSTRACT:
A doped region is provided on a substrate. A plane with conductive useful structures and a conductive filler structure is arranged at the surface of the substrate. The conductive filler structure is conductively connected to the doped region. In this way, charging of the conductive filler structure, which is provided for improving the planarity of the circuit arrangement and has no circuit-oriented function, is avoided.

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D. Widmann, et al., “Technologie hochintegrierter Schaltungen”, 2d. Edition, Springer Verlag, pp. 346-347, 1007.

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