Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2008-05-13
2008-05-13
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S340000
Reexamination Certificate
active
07372128
ABSTRACT:
The invention discloses an integrated circuit anti-interference outline structure for applications of integrated circuits capable of shielding the integrated circuit from invasions of external electromagnetic waves and leaks of internal electromagnetic waves, wherein the integrated circuit anti-interference outline structure surrounds a periphery of a partial circuit within the integrated circuit and comprises a plurality of PNP structures. At a surface of the integrated circuits are two metal strips for producing a parasitic capacitance at poly layers in order to control noises within acceptable ranges. On a P-substrate therein is disposed with a deep N-well layer for connecting to an N-terminal of an N-well layer, so as to produce a positive voltage zone having a large area, and thus having noise currents overflow from a ground terminal as well as preventing the integrated circuit from invasions and leaks of electromagnetic waves.
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Excerpts from Seaplast Canada Website (2000)—www.seaplast.com (products).
Excerpts from Peterson Fiberglass Lammota Inc. (2000)—www .petersonfiberglass.com.
Cheng Jean-Jen
Chuang Pei-Sung
Alcor Micro, Corp.
Fenty Jesse A.
Jackson Jerome
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