Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
1998-08-21
2001-02-27
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C438S014000
Reexamination Certificate
active
06194233
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to the manufacture of CMOS integrated circuits. Specifically, a method for designing integrated circuits which prevents an excessive electrostatic charge from accumulating on circuit conductors during manufacture is described.
Custom CMOS integrated circuit technologies require a processing step which is known as a Reactive Ion Etch (RIE) to process the various metal layers of an integrated circuit. In the ASIC (Application Specific Integrated Circuit) environment for manufacturing custom logic circuits, components such as processors, memory arrays, and input and output interface circuits are integrated in a custom circuit and interconnected by metal wiring layers. The RIE process for establishing the connections of a layer may result in electrostatic charge being built up on the metal lines of each layer which may be applied to the transistor gates permanently damaging the transistor.
The problem of electrostatic charge building up on metal lines during fabrication is well known and numerous solutions have been proposed. Various techniques have been employed to reduce or dissipate the charge as it builds up on the metal lines to avoid damaging the connected transistor. A common charge dissipation technique is to build floating gate diodes on each circuit input pin, which connects to a gate, to slowly bleed off the electrostatic charge as it accumulates on the metal line. However, as circuit densities increase, it is more difficult to find sufficient surface area for locating floating gate diodes, whose only function is to protect the gates during manufacture. The floating gate diodes remain as permanent circuit elements adversely affecting performance and power dissipation of the integrated circuit.
Instead of placing floating gate diodes on each input pin, the full chip designs may be checked before implementation into silicon for potential problem areas where charge is likely to build up during fabrication. An antenna rule has been devised to identify locations within the metalization layers where charge may accumulate to a level which damages the gate oxide of a connected transistor. The antenna rule compares the surface area presented by a metallic conductor connected to a gate, and the actual gate area. The antenna rule is applied by considering the metalization area of each layer. At the first of such layers, such as M
1
, all metalization segments which are ultimately connected to a diffusion area are not subject to the rule since the diffusion area dissipates any charge accumulating on the metal segments. The remaining segments which connect to gate connections, and have the potential for destroying the gate oxide level, are subject to the antenna rule. Multiple segments of the metalization level M
1
may be connected to each other and to multiple gates. A violation occurs if the sum of commonly connected metalization areas, compared to the sum of the gate areas connected to the commonly connected metalization area exceed the established threshold. Those electrically connected metalization segments that do not pass the antenna rule risk gate failures from excessive electrostatic charge.
When the metallic conductor area on a given layer to gate area threshold is above a recognized value, the rule is violated which identifies a potential problem. The design can be changed to provide different routing and metal wiring connections to avoid the consequence of lengthy metalized lines and the resulting charge buildup.
However, the process of redesign to avoid the metal/gate area threshold violation is iterative in nature, requiring numerous changes to the metal wiring routing and several checks for each change.
The present invention utilizes the antenna rule to identify and locate metal areas which violate the rule. However, the violations once located are avoided by a process which only changes the design locally without disturbing the remaining metalization layers and circuit interconnectivity.
SUMMARY OF THE INVENTION
It is an object of this invention to avoid the accumulation of excessive electrostatic charge on a circuit metalization line during fabrication of an integrated circuit.
This and other objects of the invention are provided for by a method which produces an integrated circuit that prevents electrostatic charges from damaging a gate of a connected transistor during manufacture of the integrated circuit. The circuit is designed from a conventional net list provided by a customer which defines the functionality of the integrated circuit. Using conventional ASIC CMOS design techniques, the floor plan for the integrated circuit is created to locate the larger circuit components such as processors, memory arrays and input/output circuits on the integrated circuit. The remaining logic such as gates for interconnecting the larger circuit components are then located on the integrated circuit. The power bus routing among the circuit components as well as signal routing are then established to interconnect the circuit components.
The completed design is checked for floating gate antenna rule violations. The coordinates of each gate connection along with the location of the connected metallic circuit line or lines which violates the antenna rule are identified for each layer of the integrated circuit.
In accordance with the invention, the failing metallic line is traced to locate a position on an adjacent layer above the failing metallic line which is free of metallic wiring. If a sufficient amount of free space is located on the above adjacent level, the metal segment violating the antenna rule is broken. During manufacture of the level containing the broken metal segments, electrostatic charge produced on each segment of the metal level is reduced, thereby avoiding an excessive charge which can destroy the gate of a connected transistor. During subsequent processing steps, the segments are rejoined by connecting a bridge segment on the above adjacent layer, through two or more via holes to the ends of each segment.
The method in accordance with the invention results in a design which calls for the breaking of metalization segments which produce violations of the antenna rule for each layer of metalization, and then reconnecting the segments when the adjacent metal layer above the broken segments has been processed. The technique avoids a costly and tedious redesign of the circuit when antenna violations occur.
REFERENCES:
patent: 5278105 (1994-01-01), Eden et al.
patent: 5393701 (1995-02-01), Ko et al.
patent: 5500542 (1996-03-01), Iida et al.
patent: 5514623 (1996-05-01), Ko et al.
patent: 5654897 (1997-08-01), Tripathi et al.
patent: 5990519 (1999-11-01), Huang et al.
patent: 6002155 (1999-12-01), Tahara et al.
Derwent Abstracts, Abstract TW 93111050 A 19931228, “Method for the naturally formed layout of die—can eliminate the antenna effect”.
Bedner Thomas R.
Zuchowski Paul S.
International Business Machines - Corporation
Kotulak Richard M.
Nelms David
Nhu David
Pollock, Vande Sande & Amernick RLLP
LandOfFree
Integrated circuit and method of manufacture for avoiding... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit and method of manufacture for avoiding..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit and method of manufacture for avoiding... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2565692