Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-23
2011-08-23
Wilson, Allan R (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257S510000, C257SE21546
Reexamination Certificate
active
08003490
ABSTRACT:
An integrated circuit and method including an isolation arrangement. One embodiment provides a substrate having trenches and mesa regions and also auxiliary structures on the mesa regions. A first isolation structure covers side walls and a bottom region of the trenches and at least partially side walls of the auxiliary structure. A liner on the first isolation structure fills the trenches and gaps between the auxiliary structures with a second isolation structure; and the second isolation structure is pulled back, wherein upper sections of the liner are uncovered.
REFERENCES:
patent: 2002/0072198 (2002-06-01), Ahn
patent: 2004/0072408 (2004-04-01), Yun et al.
patent: 2005/0003630 (2005-01-01), Ji et al.
patent: 2005/0009293 (2005-01-01), Kim et al.
patent: 2005/0110074 (2005-05-01), Jang et al.
patent: 2005/0127472 (2005-06-01), Yun et al.
patent: 2005/0287731 (2005-12-01), Bian et al.
patent: 2006/0024912 (2006-02-01), Lee
patent: 2006/0205173 (2006-09-01), Song et al.
patent: 2006/0246657 (2006-11-01), Kim et al.
patent: 2008/0121977 (2008-05-01), Choi et al.
patent: 2009/0004817 (2009-01-01), Kim et al.
patent: 2009/0068817 (2009-03-01), Eun
Dickie, Billig & Czaja, PLLC
Qimonda AG
Wilson Allan R
LandOfFree
Integrated circuit and method including an isolation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit and method including an isolation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit and method including an isolation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2678431