Integrated circuit and method for manufacturing an...

Details Integrated circuit and method for manufacturing an... Integrated circuit and method for manufacturing an...

2008-01-22

2008-01-22

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

C438S334000, C438S336000, C438S343000, C438S357000

Reexamination Certificate

active

07320922

ABSTRACT:
An integrated circuit on a semiconductor chip is provided with a first bipolar transistor and a second bipolar transistor. The first bipolar transistor has a first collector region of a first conductivity type, grown by at least one epitaxial layer, and the second bipolar transistor has a second collector region of this first conductivity type grown by this epitaxial layer. The first collector region also has a first collector drift zone, and the second collector region has a second collector drift zone. Whereby, the first collector drift zone is shortened as compared to the second collector drift zone by partial etching of the epitaxial layer.

REFERENCES:
patent: 4157268 (1979-06-01), Bergeron et al.
patent: 4323417 (1982-04-01), Lam
patent: 4704785 (1987-11-01), Curran
patent: 4882294 (1989-11-01), Christenson
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 6734470 (2004-05-01), Schulman et al.
patent: 2001/0008284 (2001-07-01), Huang
patent: 2001/0008298 (2001-07-01), Sato
patent: 2001/0045619 (2001-11-01), Dekker et al.
patent: 2002/0173086 (2002-11-01), Dietrich et al.
patent: 2003/0052721 (2003-03-01), Chaudhry et al.
patent: 2003/0183903 (2003-10-01), Ikeda
patent: 2004/0169257 (2004-09-01), Romas et al.
patent: 198 26 546 (1999-08-01), None
patent: 198 45 790 (2000-03-01), None
patent: 101 24 032 (2002-11-01), None

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