Integrated circuit and method for manufacturing

Details Integrated circuit and method for manufacturing Integrated circuit and method for manufacturing

2006-09-29

2009-06-09

Do, An H (Department: 2853)

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Reexamination Certificate

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07543917

ABSTRACT:
A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate.

REFERENCES:
patent: 5122812 (1992-06-01), Hess et al.
patent: 5635968 (1997-06-01), Bhaskar et al.
patent: 5870121 (1999-02-01), Chan
patent: 6286939 (2001-09-01), Hindman et al.
patent: 6740536 (2004-05-01), Dodd et al.
patent: 2004/0124449 (2004-07-01), Liu et al.

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