Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-06-07
2005-06-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S680000
Reexamination Certificate
active
06902939
ABSTRACT:
A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
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patent: 5863602 (1999-01-01), Watanabe et al.
patent: 6015986 (2000-01-01), Schuegraf
patent: 6037220 (2000-03-01), Chien et al.
Celii Francis
Colombo Luigi
Gaynor Justin F.
Gilbert Stephen R.
Moise Theodore S.
Brady W. James
Hoel Carton H.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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