Integrated circuit and DC-DC converter formed by using the...

Electric power conversion systems – Current conversion – Integrated circuit

Reexamination Certificate

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C438S381000, C257S508000

Reexamination Certificate

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08059437

ABSTRACT:
An integrated circuit, in which the influence of parasitic capacitance between a semiconductor substrate and a resistor and between the semiconductor substrate and a capacitor can be inhibited, and a DC-DC converter provided with the integrated circuit. A shielding layer of an n-type semiconductor is formed between a p-type semiconductor substrate and a resistor formed thereon and between the semiconductor substrate and a capacitor formed thereon. A point BOOT is connected to the shielding layer, at which an electric potential changes in the same way as a change in the reference potential of a functional circuit carrying out a specified operation by using the resistor and the capacitor.

REFERENCES:
patent: 4683438 (1987-07-01), Hauenstein
patent: 5715287 (1998-02-01), Wadhawan et al.
patent: 5811882 (1998-09-01), Latham et al.
patent: 6066537 (2000-05-01), Poh
patent: 6747441 (2004-06-01), Johnson et al.
patent: 2004/0173852 (2004-09-01), Fujimori
patent: 2005/0030803 (2005-02-01), Forbes et al.
patent: 63-029962 (1988-02-01), None
patent: 63186447 (1988-08-01), None
patent: 7-30064 (1995-01-01), None

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