Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-10-08
2011-11-22
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257SE47002, C365S148000
Reexamination Certificate
active
08063394
ABSTRACT:
According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element.
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Andres Dieter
Bruchhaus Rainer
Gruening-Von Schwerin Ulrike
Klostermann Ulrich
Kreupl Franz
Economou John S.
Maldonado Julio J
Qimonda AG
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