Integrated circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307459, 357 45, 357 92, H01L 2704, H03K 19091

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active

047163143

ABSTRACT:
A high speed I.sup.2 L circuit having a topology which is based on a layout of parallel arranged gate circuits in which the inverter transistors of each gate circuit are arranged in a row and below the signal lines to which they are connected, said signal lies extending transversely to the rows, while the complementary transistors for the current supply of the inputs of the gate circuits are situated laterally beside the signal lines. Said layout facilitates the designing of comparatively compact I.sup.2 L circuits in which various measures to increase their speed can be taken, for example, the use of dielectric isolation, reduction of the input series resistance, reversal of the doping profile and the application of a potential difference between the bases of the complementary transistors and the common emitter of the inverter transistors.

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de Troye, "Integrated Injection Logic . . . ", IEEE J. of Solid State Circuits, vol. SC 9, No. 5, pp. 206-211, Oct. 1974.
Berger et al., IEEE J. of Solid State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 340-346.

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