Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2007-03-20
2007-03-20
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S278000, C330S296000, C330S310000
Reexamination Certificate
active
10963558
ABSTRACT:
An integrated circuit includes a high-frequency power amplifier and a matching circuit. The high-frequency power amplifier has at least one stage of an amplifier element. The matching circuit has a MOSFET and a detector diode. The source of the MOSFET is connected to an input of a first stage amplifier element, the drain is connected to a ground, and the gate is also connected to the ground. A capacitor is connected between the gate of the MOSFET and the ground. The detector diode is connected in parallel between the drain and the gate of the MOSFET. Turning on the MOSFET reduces the effective gain of the first stage amplifier element, thereby allowing mode change.
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NEC Electronics Corporation
Nguyen Patricia
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