Integrated circuit

Details Integrated circuit Integrated circuit

2006-01-03

2006-01-03

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S208000, C257S211000, C257S508000, C257S660000, C257S662000, C257S758000

Reexamination Certificate

active

06982477

ABSTRACT:
A lamination of metal wire layers forms an electromagnetic isolation structure. The metal wire layers are connected with each other by vias, so that a metal fence having a laminated structure is formed. The metal fence is provided so as to surround an element (e.g. a spiral inductor) that generates an electromagnetic field in an integrated circuit. The metal wire satisfies d≦λ/8, WF≧5δ, and L≦λ/20, where δ is a skin depth of an electromagnetic wave, c is a velocity of light, f is an operating frequency of the integrated circuit, d is a lateral-direction size of a metal-fence region, WF is a surrounding-line width of the metal fence, L is an interval between the vias, and λ=c/f is a wavelength of a signal. With this arrangement, it is possible to decrease electromagnetic coupling noises and coupling noises caused via the substrate.

REFERENCES:
patent: 6307252 (2001-10-01), Knoedl, Jr.
patent: 10-256250 (1998-09-01), None
“On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC's” [C. Patrick Yue et al., IEEE Journal of Solid-State Circuits, vol. 33, No. 5, pp. 743-752, Mary 1998].
“Deep Trench Guard Technology to Suppress Coupling between Inductors in Silicon RF ICs” [Cheon Soo Kimm et al., 20011 IEEE].
“Future EMC Trends in PC Board Design” [Bruce Gabrielson, EMC EXPO 1996, Jun. 16 to 19, 1996].

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