Integrated circuit

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357 48, 357 51, H01L 2992, H01L 2704, H01L 2702

Patent

active

049965697

ABSTRACT:
In an integrated circuit array having a capacitance formed by a pn-junction and separated from other components by a pn-junction, semiconductor areas are provided which connect that zone of the two semiconductor zones forming the pn-junction of the capacitance that extends deeper into the semiconductor element than the other of the two semiconductor zones forming the pn-junction of the capacitance electrically to that zone of the two semiconductor zones forming the separating pn-junction that faces away from the capacitance.

REFERENCES:
patent: 3584266 (1969-05-01), Schilling
patent: 3639814 (1972-01-01), Engbert
patent: 3962718 (1976-06-01), Inoue et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, "High Capacitance Device".

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