Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-12-27
2005-12-27
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S723000, C257S685000, C257S777000, C257S778000, C257S734000, C257S738000, C257S737000, C257S786000, C257S784000, C257S698000, C257S712000, C257S713000, C257S717000, C257S720000, C257S704000, C257S710000, C257S532000, C257S724000, C257S728000, C257S725000
Reexamination Certificate
active
06979894
ABSTRACT:
The present integrated chip package provides a low cost package that is suitable for high density semiconductors that have high power dissipation. The integrated chip package includes at least one semiconductor chip having a first surface and a second surface. The first surface of the semiconductor chip is electrically coupled to an intermediate substrate via conductive bumps. The intermediate substrate is also electrically coupled to a package substrate via a plurality of bonding wires. The second surface of the semiconductor chip is thermally coupled to a heat sink to increase the power dissipation capacity of the integrated chip package.
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