Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-04-03
2007-04-03
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S299000, C257S309000, C257S532000, C257SE21018, C257SE21011
Reexamination Certificate
active
11183864
ABSTRACT:
An integrated capacitor on a packaging substrate. The integrated capacitor comprises a conductor plane, a first dielectric layer and a signal transmission layer. The conductor plane has an extrusion layer of a first thickness. The first extrusion layer and the conductor plane are made of the same material. The first dielectric layer is formed on the conductor plane. The signal transmission layer is formed on the first dielectric layer.
REFERENCES:
patent: 5350707 (1994-09-01), Ko et al.
patent: 6033953 (2000-03-01), Aoki et al.
patent: 6115233 (2000-09-01), Seliskar et al.
patent: 6504236 (2003-01-01), Bissey
Advanced Semiconductor Engineering Inc.
Pert Evan
Sandvik Benjamin P.
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