Integrated capacitor bottom electrode for use with conformal die

Details Integrated capacitor bottom electrode for use with conformal die Integrated capacitor bottom electrode for use with conformal die

1996-01-23

1998-05-19

Picard, Leo P.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 3613212, 361313, 437 60, 437 52, 437919, H01G 406

Patent

active

057543909

ABSTRACT:
Disclosed is a capacitor construction for a more uniformly thick capacitor dielectric layer, and a method for fabricating the same. The method has special utility where the bottom electrode comprises composite layers over which the capacitor dielectric demonstrates differential growth during deposition. Exposed portions of an underlying first electrode layer, are covered either by a conductive or dielectric spacer, or by a dielectric padding. For the preferred embodiments, in which the bottom electrode comprises titanium carbonitride over rough polysilicon, a dielectric padding may be formed during a rapid thermal nitridation step, which causes silicon nitride to grow out of an exposed polysilicon sidewall. Alternatively, a sidewall spacer may be formed by deposition an additional layer of titanium nitride over the original titanim nitride strap, and performing a spacer etch.

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"Hemispherical Grained Si Formation on in-situ Phosphorus Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor," H. Watanabe, et al, IEEE Transactions on Electron Devices, vol. 42, No. 7, pp. 1247-1254, Jul. 1995.
"Silicon Processing for the VLSI Era," Wolfe, vol. II, pp. 212-214.

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