Integrated capacitor and method of fabricating same

Details Integrated capacitor and method of fabricating same Integrated capacitor and method of fabricating same

1986-10-24

1989-05-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 21265, H01L 2994

Patent

active

048267791

ABSTRACT:
An integrated capacitor having an oxide layer of less than 500 .ANG. as a dielectric or insulator. A method of fabricating a capacitor including the steps of forming an oxide layer on a substrate, forming through the oxide layer a first capacitor plate in the substrate, and forming a second capacitor plate on the oxide layer. The method also includes the step of restructuring the oxide layer after the step of forming the first capacitor plate. Since the first capacitor plate is formed through the oxide layer the oxide layer can be grown on an undoped or lightly doped substrate; thus, the effects of the doping level on the growth rate of the oxide layer are eliminated and oxide layers having a uniform thickness of less than 500 .ANG. can consistently be provided.

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