Integrated capacitance structures in microwave finline devices

Demodulators – Amplitude modulation demodulator – Having specific distortion – noise or other interference...

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332 52, 330286, 330277, 333 81B, 333218, 333247, 333250, 333 33, H03D 902

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047898402

ABSTRACT:
A finline structure comprises a dielectric substrate-mounted circuit disposed within a waveguide having on the substrate integrated distributed capacitance elements at least partially formed by laterally separated metallization layers. Thin-film construction techniques may be employed in construction. In general, the distributed capacitance elements permit the biasing of a plurality of circuit elements in a finline transmission medium. In selected structures, r.f. continuity is effected between traces and metallization layers while maintaining d.c. isolation. Examples are described of circuits which can incorporate an integrated capacitor, including but not limited to detectors, r.f. modulators, r.f. attenuators, amplifiers, and multipliers. According to the invention, a plurality of elements, as well as multiple port elements, may be selectively biased while retaining d.c. isolation and r.f. continuity. Moreover, the versatility of construction allows for higher levels of integration as well as the realization of new topologies previously unattainable. Since the capacitance structure is integrated into the thin film circuit, fewer discrete parts are required and the manufacturing process may be precisely controlled by photolithography.

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Holger Meinel and Lorenz-Peter Schmidt of AEG-Telefunken, "High Sensitivity Millimeter Wave Detectors Using Fin-Line Technology", Conference Digest of Fifth International Conference on Infrared & Millimeter Waves, Wuerzburg, West Germany, 1980, pp. 133-135.
Cornelius J. Verver and Wolfgang J. R. Hoefer, "Quarter-Wave Matching of Waveguide-to-Finline Transitions", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 12, Dec. 84.

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