Integrated BST microwave tunable devices using buffer layer...

Details Integrated BST microwave tunable devices using buffer layer... Integrated BST microwave tunable devices using buffer layer...

2005-09-19

2009-08-25

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S613000, C257SE31003, C257SE31092, C438S104000, C438S455000, C438S458000

Reexamination Certificate

active

07579621

ABSTRACT:
A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.

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