Integrated bridge device for optimizing conduction power losses

Details Integrated bridge device for optimizing conduction power losses Integrated bridge device for optimizing conduction power losses

1992-11-20

1995-08-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257566, 257577, H01L 2507, H01L 2970

Patent

active

054442915

ABSTRACT:
An integrated bridge device includes at least two arms, each of which is formed of a first and second diode connected transistor in series. The device is formed in an N+ substrate, which forms a positive output terminal. N- and N type epitaxial layers are formed over the substrate, and P and P+ regions are formed therein for each of the aforesaid arms. An N type region is contained within the P and P+ regions, and in turn contains a P type region forming a negative potential output terminal. Also included in the N type region are N++ regions capable of minimizing the current gain of parasitic transistors formed within the device.

REFERENCES:
patent: 3590345 (1971-06-01), Brewer et al.
patent: 5065213 (1991-11-01), Frisina et al.
patent: 5221855 (1993-06-01), Ferla et al.
patent: 5245211 (1993-09-01), Paparo et al.
International Electron Devices Meeting 1987, Dec. 6, 1987, Washington, D.C., pp. 766-769 Design of a high side driver in multipower-BCD and vipower technologies, C. Contiero et al.

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