Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – As active junction in bipolar transistor
Reexamination Certificate
2007-11-30
2010-02-02
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
As active junction in bipolar transistor
C257S197000, C257S370000, C257S378000, C257S539000, C257S552000, C257S565000, C257SE29030, C257SE29033, C257SE29034, C257SE29044, C257SE29171, C257SE29182, C257SE27015, C257SE27109, C438S235000
Reexamination Certificate
active
07656002
ABSTRACT:
The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.
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Barratt Curtis A.
Fresina Michael T.
Miller Dain C.
Moser Brian G.
Wohlmuth Walter A.
RF Micro Devices, Inc.
Tran Long K
Withrow & Terranova, P.L.L.C.
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