Integrated bipolar power device and a fast diode

Details Integrated bipolar power device and a fast diode Integrated bipolar power device and a fast diode

1992-03-18

1994-08-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257577, 257579, 257590, 257610, H02L 27082, H02L 27102, H02L 2970

Patent

active

053430689

ABSTRACT:
A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable of handling high current densities. At least one second area of the device is formed with reduced minority carrier lifetimes, with a fast diode being formed in this region.

REFERENCES:
patent: 3645808 (1972-02-01), Kamiyamn et al.
patent: 4138690 (1979-02-01), Nawa et al.
patent: 5128742 (1992-07-01), Kao et al.

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