Integrated bidirectional junction engineered dual insulator...

Details Integrated bidirectional junction engineered dual insulator... Integrated bidirectional junction engineered dual insulator...

2007-12-06

2010-11-16

Pham, Tuan A (Department: 2618)

Telecommunications

Transmitter and receiver at same station

C455S078000, C455S082000, C455S083000, C455S550100

Reexamination Certificate

active

07835705

ABSTRACT:
A bi-directional transceiver (100) having reduced circuitry and that may be formed on a non-semiconductor substrate includes impedance matching and filtering circuitry (114, 116, 122, 124, 128, 132) coupled to a non-linear diode (118) for converting a lower frequency modulated signal to a higher frequency RF transmit signal and to function as a square-law detector to envelope detect RF signals. The non-linear diode (118) includes, in one exemplary embodiment, at least two insulative layers disposed between two conductive layers, wherein a quantum well is formed between the insulators that allows only high-energy tunneling.

REFERENCES:
patent: 5821813 (1998-10-01), Batchelor et al.
patent: 6534784 (2003-03-01), Eliasson et al.
patent: 7468638 (2008-12-01), Tsai et al.
Archer, J., et al., Bi-Directional Amplifiers for Half-Duplex Transceivers, 0-7803-5585 IEEE, Jul. 1999 pp. 251-254.

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