Integrated arc and polysilicon etching process

Details Integrated arc and polysilicon etching process Integrated arc and polysilicon etching process

1995-11-08

1998-06-09

Lesmes, George F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

430313, 430316, 430323, 438738, 438719, 438725, 438950, 438952, B44C 122

Patent

active

057633274

ABSTRACT:
A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.

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patent: 5514880 (1996-05-01), Nishimura et al.
patent: 5580701 (1996-12-01), Lur et al.
patent: 5635335 (1997-06-01), Bae et al.

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