Integrated arc and polysilicon etching process

Details Integrated arc and polysilicon etching process Integrated arc and polysilicon etching process

1997-11-05

1999-03-23

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438725, 438742, 438952, H01L 2100

Patent

active

058859020

ABSTRACT:
A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.

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