Integratable hall element

Details Integratable hall element Integratable hall element

1986-12-19

1988-11-01

Larkins, William D.

H01L 4306

Patent

active

047823755

ABSTRACT:
In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement comprises the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.

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Zieren, IEEE IEDM, Dec. 1980, Technical Digest, pp. 669-672.
IEEE Electron Device Letters, vol. EDL4, No. 3, Mar. 1983, pp. 51-53.

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