Integratable differential light detector

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 58, 357 46, 250370, 350 9611, 307355, H01L 2714, H01L 2912, H01L 2702

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active

047543124

ABSTRACT:
This invention is directed to a three-terminal semiconductor device which acts as a differential light detector. It is based on the operation of two reverse biased PIN photodetectors where one receives light through its P-doped surface and the other through its N-doped surface. The device is configured to be compatible with applications in integrated optics and with fiber optics. In principle of operation the invention relies on the production and collection of electrons from the detection of a first light intensity and the production and collection of holes from the detection of the intensity of a second light. This is done in a connected or integrated semiconductor which allows the recombination of electrons and holes. The excess number of electrons or holes, depending upon which light is received with the greatest intensity, is extracted from the recombination region and is the basis for the output signal.

REFERENCES:
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patent: 4366377 (1982-12-01), Notthoff et al.
patent: 4447746 (1984-05-01), Fang et al.
patent: 4533783 (1985-08-01), Benjamin et al.
patent: 4582952 (1986-04-01), McNeely et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4600935 (1986-07-01), Dresner

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