Patent
1986-05-07
1989-03-21
James, Andrew J.
357 26, 357 1, H01L 2720
Patent
active
048148563
ABSTRACT:
A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
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Kurtz Anthony D.
Nunn Timothy A.
Weber Richard A.
Clark S. V.
James Andrew J.
Kulite Semiconductor Products Inc.
Plevy Arthur L.
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