Integral transducer assemblies employing thin homogeneous diaphr

Details Integral transducer assemblies employing thin homogeneous diaphr Integral transducer assemblies employing thin homogeneous diaphr

1977-10-13

1980-05-20

Albritton, C. L.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

29610SG, 357 26, G01L 122

Patent

active

042041856

ABSTRACT:
A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.

REFERENCES:
patent: 3853650 (1974-12-01), Hartlaub
patent: 3858150 (1974-12-01), Gurtler et al.

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