Integral charge storage basement and wideband embedded...

Details Integral charge storage basement and wideband embedded... Integral charge storage basement and wideband embedded...

2007-12-04

2007-12-04

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S660000, C257S724000, C257S702000, C257SE23114

Reexamination Certificate

active

11198285

ABSTRACT:
A capacitive structure and technique for allowing near-instantaneous charge transport and reliable, wide-band RF ground paths in integrated circuit devices such as integrated circuit dies, integrated circuit packages, printed circuit boards, and electronic circuit substrates is presented. Methods for introducing resistive loss, dielectric loss, magnetic loss, and/or radiation loss in a signal absorption ring implemented around a non-absorptive area of one or more conductive layers of an integrated circuit structure to dampen laterally flowing Electro-Magnetic (EM) waves between electrically adjacent conductive layers of the device are also presented.

REFERENCES:
patent: 5010641 (1991-04-01), Sisler
patent: 5079069 (1992-01-01), Howard et al.
patent: 5162977 (1992-11-01), Paurus et al.
patent: 6104258 (2000-08-01), Novak
patent: 6559484 (2003-05-01), Li et al.
patent: 2002/0079456 (2002-06-01), Lingren et al.
patent: 2004/0145425 (2004-07-01), Grebenkemper

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