Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-04-05
2005-04-05
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S499000, C257S500000, C257S505000, C257S506000, C438S218000, C438S219000, C438S294000, C438S353000
Reexamination Certificate
active
06876054
ABSTRACT:
An electronic device, a method of manufacturing an electronic device and an integrated circuit that employs at least one such electronic device to couple first and second circuits together in an isolated fashion. In one embodiment, the electronic device includes a first conductive channel, a second conductive channel and an isolation layer. The isolation layer is formed from and over the first conductive channel, interposing the first conductive channel and the second conductive channel and configured both to isolate the second conductive channel electrically from the first conductive channel and transfer momentum between charge carriers in the first conductive channel and charge carriers in the second conductive channel.
REFERENCES:
patent: 6150708 (2000-11-01), Gardner et al.
Shapira Shye
Wilson William B.
Zaneski Gerard
Agere Systems Inc.
Kang Donghee
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