Integrable active diode

Details Integrable active diode Integrable active diode

1990-12-20

1992-03-24

Wojciechowicz, Edward J.

357 2313, 357 48, 357 52, 357 86, H01L 2702

Patent

active

050993020

ABSTRACT:
An active diode for protecting from reverse voltages a monolithic structure comprising a logic portion and a power portion of the vertical MOS transistor type. The logic portion is constituted by conventional MOS transistors (TL-1) placed in a well (b 64) of a first conductivity type formed in a substrate (60) of the second conductivity type, the rear surface (74) of the substrate corresponding to the drain of the vertical MOS transistor. The active diode comprises a MOS transistor (TS), the gate of which (65) is controlled by a voltage whose sign is representative of the supply voltage polarity, the drain region of which (67) is grounded, and a highly doped deep area (71) of the first conductivity type extending from the upper surface (69) of the well (64), said area being connected to the source (66) of the MOS transistor.

REFERENCES:
patent: 3940785 (1976-02-01), Genesi
patent: 4066918 (1978-01-01), Heuner et al.
patent: 4303958 (1981-12-01), Allgood
patent: 4514646 (1985-04-01), Ando et al.
patent: 4805008 (1989-02-01), Yao et al.
patent: 4857985 (1989-08-01), Miller

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