Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2005-01-04
2005-01-04
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S758000
Reexamination Certificate
active
06838764
ABSTRACT:
A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foamed polymer layer. An insulator is formed by forming a polymer layer having a thickness on a substrate. The polymer layer is foamed to form a foamed polymer layer having a surface and a foamed polymer layer thickness, which is greater than the polymer layer thickness. The surface of the foamed polymer layer is treated to make the surface hydrophobic.
REFERENCES:
patent: 3506438 (1970-04-01), Krock et al.
patent: 3953566 (1976-04-01), Gore
patent: 3956195 (1976-05-01), Topchiashvili et al.
patent: 3962153 (1976-06-01), Gore
patent: 4096227 (1978-06-01), Gore
patent: 4368350 (1983-01-01), Perelman
patent: 4482516 (1984-11-01), Bowman et al.
patent: 4561173 (1985-12-01), Te Velde
patent: 4599136 (1986-07-01), Araps et al.
patent: 4725562 (1988-02-01), El-Kareh et al.
patent: 4749621 (1988-06-01), Araps et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5128382 (1992-07-01), Elliott, Jr. et al.
patent: 5137780 (1992-08-01), Nichols et al.
patent: 5158986 (1992-10-01), Cha et al.
patent: 5158989 (1992-10-01), Ogitani et al.
patent: 5173442 (1992-12-01), Carey
patent: 5227103 (1993-07-01), Muschiatti
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5340843 (1994-08-01), Tsuruta et al.
patent: 5408742 (1995-04-01), Zaidel et al.
patent: 5438539 (1995-08-01), Mori
patent: 5449427 (1995-09-01), Wojnarowski et al.
patent: 5470693 (1995-11-01), Sachdev et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5473814 (1995-12-01), White
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor et al.
patent: 5554305 (1996-09-01), Wojnarowski et al.
patent: 5591676 (1997-01-01), Hughes et al.
patent: 5593926 (1997-01-01), Fujihira
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5780121 (1998-07-01), Endo
patent: 5785787 (1998-07-01), Wojnarowski et al.
patent: 5786630 (1998-07-01), Bhansali et al.
patent: 5798200 (1998-08-01), Matsuura et al.
patent: 5804607 (1998-09-01), Hedrick et al.
patent: 5821621 (1998-10-01), Jeng
patent: 5830923 (1998-11-01), Venkataraman
patent: 5841075 (1998-11-01), Hanson
patent: 5844317 (1998-12-01), Bertolet et al.
patent: 5864923 (1999-02-01), Rouanet et al.
patent: 5878314 (1999-03-01), Takaya et al.
patent: 5879787 (1999-03-01), Petefish
patent: 5879794 (1999-03-01), Korleski
patent: 5891797 (1999-04-01), Farrar
patent: 5912313 (1999-06-01), McIntosh et al.
patent: 5923074 (1999-07-01), Jeng
patent: 5926732 (1999-07-01), Matsuura
patent: 5953626 (1999-09-01), Hause et al.
patent: 5994777 (1999-11-01), Farrar
patent: 6037245 (2000-03-01), Matsuda
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6040628 (2000-03-01), Chiang et al.
patent: 6043146 (2000-03-01), Watanabe et al.
patent: 6071600 (2000-06-01), Rosenmayer
patent: 6077792 (2000-06-01), Farrar
patent: 6130140 (2000-10-01), Gonzalez
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6172305 (2001-01-01), Tanahashi
patent: 6195156 (2001-02-01), Miyamoto et al.
patent: 6245658 (2001-06-01), Buynoski
patent: 6265303 (2001-07-01), Lu et al.
patent: 6268637 (2001-07-01), Gardner et al.
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6323125 (2001-11-01), Soo et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6342454 (2002-01-01), Hawker et al.
patent: 6352818 (2002-03-01), Hsieh
patent: 6380294 (2002-04-01), Babinec et al.
patent: 6413827 (2002-07-01), Farrar
patent: 6420261 (2002-07-01), Kudo
patent: 6420262 (2002-07-01), Farrar
patent: 6420441 (2002-07-01), Allen et al.
patent: 6433413 (2002-08-01), Farrar
patent: 6503818 (2003-01-01), Jang
patent: 20010014512 (2001-08-01), Lyons et al.
patent: 20010034117 (2001-10-01), Eldridge et al.
patent: 20020094651 (2002-07-01), Farrar
patent: 01-230505 (2001-08-01), None
Bai, Y., et al., “Photosensitive Polynorbornene as a Dielectric Material for Packaging Applications”,Proceedings of the 2001 International Symposium on Advanced Packaging Materials,(2001), pp. 322-326.
Grove, N., et al., “Functionalized Polynorbornene Dielectric Polymers: Adhesion and Mechanical Properties”,Journal of Polymer Science,(1999), pp. 3003-3010.
Labadie, J., et al., “Nanopore Foams of High Temperature Polymers”,IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15,(Dec., 1992), pp. 925-930.
Abraham Fetsum
Schwegman Lundberg Woessner & Kluth P.A.
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