Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-02-20
1994-09-27
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257288, 257289, 257405, H01L 2701, H01L 2900, H01L 2978
Patent
active
053509447
ABSTRACT:
Electrical quality insulating films on n-type and p-type diamond substrates are provided in which an insulating film such as a silicon dioxide film is deposited onto the exposed face of a diamond substrate, such as by chemical vapor deposition. Forming a conducting layer atop the silicon dioxide allows the creation of a metal-oxide-silicon device with which semiconductor carriers can be controlled through the application of a bias voltage to the conductor surface.
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Geis Michael W.
Smythe Daniel L.
Crane Sara W.
Massachusetts Institute of Technology
Monin D.
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