Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1995-05-04
1997-12-23
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427529, 427563, 427 99, C23C 1410
Patent
active
057005265
ABSTRACT:
Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.
REFERENCES:
patent: 4868068 (1989-09-01), Yamaguchi et al.
patent: 5083033 (1992-01-01), Komano et al.
patent: 5086230 (1992-02-01), Adachi et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5149974 (1992-09-01), Kirch et al.
patent: 5236547 (1993-08-01), Takahashi et al.
patent: 5273849 (1993-12-01), Harriot et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
H. Komano et al. in Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition, Japanese Journal of Applied Physics, vol. 28, No. 11, Nov. 1989, pp. 2372-2375.
W. Thompson, Applications of Focused Ion Beam Induced Chemistry, in IMB '94 International Workshop on Ion Micro Beams--Generation and Applications--Abstracts, 9-13 May 1994, one page abstract.
D. Stewart et al., Focused ion beam deposition of new materials; dielectric films for device modification and mask repair, and tantalum films for x-ray mask repair, Electron-Beam, Xray, EUV and Ion-Beam Submicrometer Lithography for Manufacturing V, SPIE vol. 2437, pp. 276-283, Jun. 195.
New--microdeposition of insulating materials enhances fib capabilities, FEI Focus, FEI Company newsletter, fall 1994, pp. 1 and 6.
Cecere Michael A.
Masnaghetti Douglas
Ximen Hongyu
Beck Shrive
Oreskovic Tammy L.
Riter Bruce D.
Schlumberger Technologies Inc.
LandOfFree
Insulator deposition using focused ion beam does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulator deposition using focused ion beam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulator deposition using focused ion beam will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1800856