Insulator and metallization method for VLSI devices with anisotr

Details Insulator and metallization method for VLSI devices with anisotr Insulator and metallization method for VLSI devices with anisotr

1982-09-20

1984-12-25

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Electrical device making

29577C, 357 68, 156643, H01L 21283

Patent

active

044894813

ABSTRACT:
In manufacture of VLSI semiconductor devices, the insulator surface upon which a metallization pattern is deposited must be smooth to facilitate lithographic operations. This requires the insulator to be thick and flowed or otherwise treated to eliminate steep edges. A contact hole etched in a thick insulator has steep sidewalls, however, and so chemical vapor deposition is preferrably used for the metallization so the sidewalls will be coated. A thin insulator coating is deposited after the contact holes are etched and prior to metallization to cover the low-resistance flowed insulator and self-align the contacts.

REFERENCES:
patent: 4327477 (1982-05-01), Yaron et al.
Tsang, P. J., "Method of Forming Poly-Si Pattern with Tapered Edge", in IBM-T.D.B., vol. 19, No. 6, Nov. 1976, pp. 2047-2048.

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