Insulation substrate for a semiconductor device

Details Insulation substrate for a semiconductor device Insulation substrate for a semiconductor device

1997-09-30

1999-02-09

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257706, 257707, 257713, 257796, 361690, 361707, 361708, H01L 2306, H01L 2310

Patent

active

058698906

ABSTRACT:
A Ceramic Bonding Copper (CBC) substrate used in semiconductor modules includes a ceramic plate having foil-shaped copper plates bonded to the ceramic plate by the direct copper bonding method. A circuit pattern is formed on one of the copper plates. The ceramic plate is fabricated by sintering at high temperature an alumina powder compact containing zirconia and one or more of the following additives: yttria, calcia, magnesia, and ceria. The flexural strength and the thermal conductivity of the alumnina ceramic plate of the invention are remarkably improved, facilitating a reduction in the thickness of the ceramic plate. The reduction in thickness of the CBC substrate further improves the ability of the semiconductor device to radiate heat and therefore increases the current carrying capability of the semiconductor device.

REFERENCES:
patent: 5561321 (1996-10-01), Hirano et al.

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