Insulation layer reflow

Coating processes – Electrical product produced – Welding electrode

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Details

219121LE, 219121LF, 29879, B05D 306

Patent

active

042846595

ABSTRACT:
This disclosure is directed to a method of forming an interlevel dielectric glass layer (16) on a semiconductor device, the layer having a plurality of feed-through apertures (17--17) therein. A CW laser beam (29) is continuously raster scanned over the surface of the glass layer (16) to reflow the layer to densify the material and form a smooth surface topography about the apertures (17--17).

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke
patent: 3825442 (1974-07-01), Moore
patent: 3911163 (1975-10-01), Wilson
patent: 4030952 (1977-06-01), Luce et al.
patent: 4039359 (1977-08-01), Nakamoto
patent: 4122240 (1978-10-01), Banas et al.
patent: 4159686 (1979-07-01), Heim

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