Insulation layer forming method

Details Insulation layer forming method Insulation layer forming method

1992-09-30

1994-05-24

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4274301, 4274432, B05D 512

Patent

active

053147103

ABSTRACT:
An insulation layer forming method for processing a substrate having a first surface area covered with a photo resist mask pattern and a second surface area uncovered with the photo resist mask pattern to form an SiO2 insulation layer on the second surface area of the substrate. The method comprises the steps of dipping the substrate in an organic solvent having no compatibility with water and photo resist, recirculating the organic solvent under heat to remove water from the substrate, solving an organic silicone compound in the organic solvent, and recirculating the organic solvent having the organic silicone compound under heat to form the SiO2 insulation layer while removing a by-product.

REFERENCES:
Patent Abstracts of Japan, vol. 012, No. 324, (E-653), of Japanese Published Application No. 63-090137 (1988), Sep. 2, 1988.
Patent Abstracts of Japan, vol. 015, No. 153 (P1191), of Japanese Published Application No. 30-24550 (1991) Apr. 17, 1991.
Database WPI, Section Ch, Week 4278, Derwent Publications Ltd, London, G.B., Class A, AN 78-75397, & JP-A-53105377 (Sep. 13, 1978).
Database WPI, Section Ch, Week 4779, Derwent Publication Ltd, London, G.B., Class A, AN 79-85335, & JP-A-54133881 (Oct. 17, 1979).

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