Insulation film for a semiconductor device

Details Insulation film for a semiconductor device Insulation film for a semiconductor device

1988-01-22

1989-06-06

Carroll, J.

357 2315, 357 41, H01L 2978, H01L 2702, H01L 2934

Patent

active

048376108

ABSTRACT:
A semiconductor device is provided having as an insulating oxide film a silicon oxide film containing a metal, such as iron or chromium, of an average concentration of 1.times.10.sup.16 atoms/cm.sup.3 to 1.times.10.sup.19 atoms/cm.sup.3 which can be readily trapped therein.

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