Insulation film etching method

Details Insulation film etching method Insulation film etching method

2005-11-22

2005-11-22

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S716000, C438S734000

Reexamination Certificate

active

06967171

ABSTRACT:
The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film.When the first step plasma etching using CHF3/Ar/N2mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source46with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel10are whirled by the purging gas to be discharged through an exhaust port10band through an exhaust pipe52.When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2mixed gas.

REFERENCES:
patent: 6613689 (2003-09-01), Liu et al.
patent: 6712983 (2004-03-01), Zhao et al.
patent: 2003/0068582 (2003-04-01), Komada et al.
patent: 2004/0106293 (2004-06-01), Igarashi
patent: 2004/0171273 (2004-09-01), Oyama et al.

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