Insulation film

Details Insulation film Insulation film

2007-11-20

2007-11-20

Yoon, Tae H (Department: 1714)

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

C427S098800, C438S706000, C438S781000, C528S032000

Reexamination Certificate

active

10726666

ABSTRACT:
An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

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