Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-02-07
2006-02-07
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S060000, C257S635000, C257S639000, C257S640000, C257S758000
Reexamination Certificate
active
06995472
ABSTRACT:
An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
REFERENCES:
patent: 6177329 (2001-01-01), Pang
patent: 6534870 (2003-03-01), Shimooka et al.
patent: 03-156929 (1991-07-01), None
patent: 05-021617 (1993-01-01), None
patent: 08-083839 (1996-03-01), None
patent: 10-284592 (1998-10-01), None
patent: 11-243145 (1999-09-01), None
patent: 11-297827 (1999-10-01), None
Notice of Grounds for Rejection issued by the Japanese Patent Office for Japanese Patent Application Serial No. 2003-202486 and English translation thereof.
Kawamoto Hiroshi
Matsumura Tsuyoshi
Miyasato Mikie
Nakajima Takahito
Uozumi Yoshihiro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Tran Minhloan
Tran Tan
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