Insulating target material, method of manufacturing...

Details Insulating target material, method of manufacturing... Insulating target material, method of manufacturing...

2006-08-29

2010-06-08

Hendrickson, Stuart (Department: 1793)

Chemistry of inorganic compounds

Oxygen or compound thereof

Metal containing

C204S298130, C501S134000, C423S598000, C423S618000, C423S594170

Reexamination Certificate

active

07731933

ABSTRACT:
An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.

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Examination result issued in corresponding European application.
Griswold E. M., Sayer M., Amm D. T., Calder I.D.: “The influence of niobium-doping on lead zirconate titanate ferroelectric thin films”, Canadian Journal of Physics, vol. 69, No. 3-4, Mar. 1991, pp. 260-264, XP009074900.

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