Insulating target material, method of manufacturing...

Details Insulating target material, method of manufacturing... Insulating target material, method of manufacturing...

2011-01-11

2011-01-11

Bos, Steven (Department: 1793)

Chemistry of inorganic compounds

Oxygen or compound thereof

Metal containing

C423S594200, C423S594400, C423S594600, C423S594900, C423S594160, C423S263000, C423S326000, C423S595000, C423S596000, C423S598000, C423S599000, C501S103000, C501S126000, C501S134000

Reexamination Certificate

active

07867472

ABSTRACT:
An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3. The insulating target material includes: an oxide of an element A; an oxide of an element B; an oxide of an element X; and at least one of an Si compound and a Ge compound, the element A being at least one element selected from La, Ca, Sr, Mn, Ba, and Re, the element B being at least one element selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb, and Nd, and the element X being at least one element selected from Nb, Ta, and V.

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“Fabrication and Electric Properties of LaCoO3 Thin Films by Ion-Beam Sputtering”, Hattori, T. et al., Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH., vol. 388, No. 1-2, June 1, 2001, pp. 183-188, XP004234768.

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