Insulating nitride compounds as electron emitters

Details Insulating nitride compounds as electron emitters Insulating nitride compounds as electron emitters

1974-10-24

1976-10-12

Segal, Robert

Electric lamp and discharge devices

Geiger-mueller type

315 94, 313346R, H01J 3906, H01J 130, H01J 1924

Patent

active

039860655

ABSTRACT:
A high emission of electrons, as a result of negative electron affinity, has been achieved from an insulating nitride coated with a film of an electropositive work function reducing material.

REFERENCES:
patent: 3387161 (1968-06-01), Laar et al.
patent: 3513316 (1970-05-01), Hirschfeld
patent: 3631303 (1971-12-01), Antypas et al.
patent: 3644770 (1972-02-01), Bell
Maruska et al., "The Preparation and Properties of Vapor-Deposited Single-Crystalline GaN;" Applied Physics Letters, vol. 15, No. 10, Nov. 15, 1969.

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