Insulating material of non-single crystalline silicon compound

Details Insulating material of non-single crystalline silicon compound Insulating material of non-single crystalline silicon compound

1985-11-25

1987-12-08

Buffalow, Edith

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Web or sheet containing structurally defined element or...

Physical dimension specified

427 39, 428450, 501 88, 501 90, B32B 1500

Patent

active

047118075

ABSTRACT:
An insulating material of non-single crystalline silicon compound comprising a silicon compound which includes argon. The insulating material realizes a high breakdown voltage and heat-resistivity. The insulating material can be preferably employed as an insulator for substrates in various electronic fields.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.
J. Appl. Phys., "Microstructure and Properties of Rf-Sputtered Amorphous Hydrogenated Silicon Films", vol. 52, No. 8, pp. 5329-5339 (Aug., 1981).

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