Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2007-07-25
2011-10-18
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257SE51001, C427S385500, C427S487000
Reexamination Certificate
active
08039294
ABSTRACT:
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
REFERENCES:
patent: 7879688 (2011-02-01), Novack et al.
patent: 2003/0031952 (2003-02-01), Harada et al.
patent: 2004/0180988 (2004-09-01), Bernius et al.
patent: 2005/0026662 (2005-02-01), Fechner et al.
patent: 2006/0011909 (2006-01-01), Kelley et al.
patent: 2006/0060841 (2006-03-01), Kim et al.
patent: 2006/0060857 (2006-03-01), Mardilovich et al.
patent: 2006/0097249 (2006-05-01), Kim et al.
patent: 2006/0180809 (2006-08-01), Park et al.
patent: 2007/0085071 (2007-04-01), Kim et al.
patent: 2007/0126002 (2007-06-01), Moriya et al.
patent: 2008/0017848 (2008-01-01), Maliakal
patent: 1489141 (2004-12-01), None
patent: 10-190001 (1998-07-01), None
patent: 1998-0080190 (1998-11-01), None
patent: 1020000045272 (2000-07-01), None
patent: 1020020084376 (2002-11-01), None
patent: 1020030016981 (2003-03-01), None
patent: 1020040028010 (2004-04-01), None
patent: 1020050123332 (2005-12-01), None
patent: 1020060037732 (2006-05-01), None
Gross, S., et al. “Dielectric Investigation of Inorganic-Organic Hybrid Film Based on Zirconium Oxocluster-Crosslinked PMMA.” J. Non-Cryst. Sol., vol. 322 (2003): pp. 154-159.
Ahn Seong Deok
Baek Kyu Ha
Kang Seung Youl
Kim Gi Heon
Suh Kyung Soo
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Such Matthew W
LandOfFree
Insulating layer, organic thin film transistor using the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulating layer, organic thin film transistor using the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating layer, organic thin film transistor using the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4287180