Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-06-12
2007-06-12
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257S195000, C257S024000
Reexamination Certificate
active
10201345
ABSTRACT:
AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semiconductor layer on it. The barrier layer has a wider bandgap than the high resistivity layer and a 2DEG forms between the layers. Source and drain contacts contact the barrier layer, with part of the surface of the barrier layer uncovered by the contacts. An insulating layer is included on the uncovered surface of the barrier layer and a gate contact is included on the insulating layer. The insulating layer forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive. The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition (MOCVD). In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.
REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5569937 (1996-10-01), Bhatnagar et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6057564 (2000-05-01), Rennie
patent: 6140169 (2000-10-01), Kawai et al.
patent: 6475857 (2002-11-01), Kim et al.
patent: 6495409 (2002-12-01), Manfra et al.
patent: 6690042 (2004-02-01), Khan et al.
Khan et al., AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, IEEE Electron Device Letters, V.21, N2, Feb. 2000.
The Electrical Engineering Handbook, 2d Edition, DORF, p. 994, (1997) CRC Press.
IEEE Electron Device Letters, vol. 18, No. 10, (Oct. 1997), p. 492.
Wu et al., “High A1 Content AlGaN/GaN HEMTs With Very High Performance”, IEDM-1999 Digest pp. 925-927, Washington, D.C. Dec. 1999.
IEEE Transactions on Electron Devices, vol. 48, No. 3/Mar. 2001, p. 581-585.
Kahn M A et al., “AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates”, Applied Physics Letters, American Institute of Physics. New York, US, vol. 77, No. 9, Aug. 2000, p. 1339-1341 XP000951319 ISSN: 0003-6951.
Lu W et al. “P-Type SiGe Transistors With Low Gate Leakage Using SiN Gate Dielectric”, IEEE Electron Device Letters, IEEE, Inc., New York, US, vol. 20, No. 10, Oct. 1999, pp. 514-516, XP000890470, ISSN: 0741-3106.
Zhang N-Q et al., “High Breakdown GaN HEMT With Overlapping Gate Structure”, IEEE Electron Device Letters, IEEE, Inc. New York, US, vol. 9, Sep. 2000, pp. 373-375, XP000954354, ISSN: 0741-3106.
Tilak, V. et al., “Effect of Passivation on AlGaN/GaN HEMT Device Performance”, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE 27thInternational Symposium on Compound Semiconductors (Cat. No. 00TH8498), 2000 IEEE International Symposium on Compound Semiconductors Proceedings of TH, p. 357-363, XP002239700, 2000, Piscataway, NJ, USA, IEEE, USA ISBN: 0-7803-6258-6.
Applied Physics Letters, vol. 77, No. 9, Aug. 2000, AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, Kahn et al.pp. 1339-1340.
Mishra Umesh
Parikh Primit
Wu Yifeng
Cree Inc.
Hu Shouxiang
Koppel, Patrick, Heybl & Dawson
LandOfFree
Insulating gate AlGaN/GaN HEMT does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulating gate AlGaN/GaN HEMT, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating gate AlGaN/GaN HEMT will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3827371